Description
General part information
IAUCN04S7L005ATMA1
A portfolio of 16 products (RDS (on)max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on)x Qg) and performance on the market
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUCN04S7L005ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 430 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 141 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 9415 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-43 |
| Power Dissipation (Max) | 179 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 0.52 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources