Description
General part information
IMSQ120R040M2HHXUMA1
CoolSiC™ MOSFET discrete1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMSQ120R040M2HHXUMA1 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Tc) | 57 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Max) | 36 nC |
| Input Capacitance (Ciss) (Max) | 1310 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Features | 16 Leads, Exposed Pad |
| Package Length | 0.606 in |
| Package Name | 24-BSOP, PG-HDSOP-16-221 |
| Package Width | 15.4 mm |
| Power - Max (Tc) | 290 W |
| Rds On (Max) | 40 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) | 5.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources