Description
General part information
GCMX008C120S1-E1
GEN3 1200V 8M SIC MOSFET MODULE,
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX008C120S1-E1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 188 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 506 nC |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Power Dissipation (Max) | 536 W |
| Rds On (Max) | 12 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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