Description
General part information
IQDH88N06LM5CGATMA1
The power MOSFET IQDH88N06LM5CG 60 V comes in a PQFN 5x6 mm2Source-Downpackage. The part offers the industry’s lowest RDS(ON)of 0.88 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like class-D audio, high-power chargers,SMPS,telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datacenters and AI-server farms.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQDH88N06LM5CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 42 A |
| Current - Continuous Drain (Id) (Tc) | 447 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 152 nC |
| Input Capacitance (Ciss) (Max) | 14000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 9-PowerTDFN |
| Package Name | PG-TTFN-9-U02 |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) | 0.86 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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