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Description

General part information

TK14C65W5,S1Q

MOSFET N-CH 650V 13.7A I2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationTK14C65W5,S1Q
Current - Continuous Drain (Id) (Ta)13.7 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameI2PAK
Power Dissipation (Max)130 W
Rds On (Max)300 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

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