Description
General part information
EPC2367
TRANS GAN 100V DIE,1.5 MOHM, 5PI
Technical Specifications
Parameters and characteristics for this part
| Specification | EPC2367 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 78 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 2170 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 5-PowerWQFN |
| Package Length | 3.3 mm |
| Package Name | 5-QFN |
| Package Width | 3.3 mm |
| Rds On (Max) | 1.2 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) Positive | 6 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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