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SQ2325ES-T1_GE3

SQ2325ES-T1_GE3

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Vishay Dale

MOSFET P-CH 150V 840MA TO236

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SQ2325ES-T1_GE3

SQ2325ES-T1_GE3

Active
Vishay Dale

MOSFET P-CH 150V 840MA TO236

Find alt

Description

General part information

SQ2325ES-T1_GE3

MOSFET P-CH 150V 840MA TO236

Technical Specifications

Parameters and characteristics for this part

SpecificationSQ2325ES-T1_GE3
Current - Continuous Drain (Id) (Tc)840 mA
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)10 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)250 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power Dissipation (Max)3 W
QualificationAEC-Q101
Rds On (Max)1.77 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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