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BFU660F,115

BFU660F,115

Obsolete
NXP USA Inc.

BIPOLAR - RF TRANSISTOR, NPN, 5.5 V, 21 GHZ, 225 MW, 30 MA, SOT-343F

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BFU660F,115

BFU660F,115

Obsolete
NXP USA Inc.

BIPOLAR - RF TRANSISTOR, NPN, 5.5 V, 21 GHZ, 225 MW, 30 MA, SOT-343F

Find alt

Description

General part information

BFU660F,115

BIPOLAR - RF TRANSISTOR, NPN, 5.5 V, 21 GHZ, 225 MW, 30 MA, SOT-343F

Technical Specifications

Parameters and characteristics for this part

SpecificationBFU660F,115
Current - Collector (Ic) (Max)0.06 A
DC Current Gain (hFE) (Min)90
Frequency - Transition21 GHz
Gain (Max)21 dB
Gain (Min)12 dB
Mounting TypeSurface Mount
Noise Figure (Typical) Maximum1.2 dB
Noise Figure (Typical) Minimum0.6 dB
Operating Temperature150 °C
Package / CaseSOT-343F
Package Name4-DFP
Power - Max225 mW
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5 V

Pricing

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CAD

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Documents

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