Description
General part information
BGSX33M5U16E6327XTSA1
The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.
Technical Specifications
Parameters and characteristics for this part
| Specification | BGSX33M5U16E6327XTSA1 |
|---|---|
| Circuit | 3P3T |
| Frequency Range (Max) | 7.125 GHz |
| Frequency Range (Min) | 600 MHz |
| Insertion Loss | 1.02 dB |
| Isolation | 33 dB |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| RF Type | WCDMA, LTE, 5G, GSM |
| Test Frequency (Maximum) | 7.125 GHz |
| Test Frequency (Minimum) | 5.925 GHz |
| Voltage - Supply (Maximum) | 1.95 V |
| Voltage - Supply (Minimum) | 1.65 V |
Pricing
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CAD
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