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HIP6603ACB

HIP6603ACB

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ON Semiconductor

HALF BRIDGE BASED MOSFET DRIVER

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HIP6603ACB

HIP6603ACB

Active
ON Semiconductor

HALF BRIDGE BASED MOSFET DRIVER

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Description

General part information

HIP6603ACB

HALF BRIDGE BASED MOSFET DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationHIP6603ACB
Channel TypeSynchronous
Current - Peak Output (Source)580 mA
Driven ConfigurationHalf-Bridge
Fall Time (Typ)20 ns
Gate ChannelN-Channel
Gate TypeMOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)85 °C
Operating Temperature (Min)0 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Rise Time (Typ)20 ns
Voltage - Supply (Maximum)13.2 V
Voltage - Supply (Minimum)10.8 VDC

Pricing

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