Description
General part information
IDH10G120C5XKSA1
TheCoolSiC™ Schottky diodegeneration 5 1200 V, 10 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point..
Technical Specifications
Parameters and characteristics for this part
| Specification | IDH10G120C5XKSA1 |
|---|---|
| Capacitance | 525 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage | 62 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | PG-TO220-2-1 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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