Description
General part information
IPF031N13NM6ATMA1
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V. This results in lower conduction losses and increased output power. The low VGS(th)spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPF031N13NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 23 A |
| Current - Continuous Drain (Id) (Tc) | 207 A |
| Drain to Source Voltage (Vdss) | 135 V |
| Drive Voltage (Max Rds On) | 8 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 135 nC, 135 nC |
| Input Capacitance (Ciss) (Max) | 9200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | PG-TO263-7-3, TO-263-7, D2PAK |
| Power Dissipation (Max) | 3.8 W, 394 W |
| Rds On (Max) | 3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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