Description
General part information
CPH6311-TL-E
P-CHANNEL SILICON MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | CPH6311-TL-E |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 31 nC |
| Input Capacitance (Ciss) (Max) | 1230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Package Name | 6-CPH |
| Power Dissipation (Max) | 1.6 W |
| Rds On (Max) | 0.042 Ohm |
| Technology | MOSFET (Metal Oxide) |
Pricing
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