Description
General part information
IPP60R040S7XKSA1
With a design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R040S7) in TO-220 features an optimal RDS(on)x price for low switching frequency applications, such as active bridge rectifiers, in-rush relays,PLCs, HV DC lines, powersolid state relaysand solid-state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP60R040S7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 83 nC |
| Input Capacitance (Ciss) (Max) | 3127 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | PG-TO220-3 |
| Power Dissipation (Max) | 245 W |
| Rds On (Max) | 40 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
3D models and CAD resources for this part