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IAUZN10S7N078ATMA1

IAUZN10S7N078ATMA1

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INFINEON

MOSFET_(75V 120V(

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IAUZN10S7N078ATMA1

IAUZN10S7N078ATMA1

Active
INFINEON

MOSFET_(75V 120V(

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Description

General part information

IAUZN10S7N078ATMA1

MOSFET_(75V 120V(

Technical Specifications

Parameters and characteristics for this part

SpecificationIAUZN10S7N078ATMA1
Current - Continuous Drain (Id) (Tj)76 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)7 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)28.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1839 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSDSON-8-39
Power Dissipation (Max)94 W
QualificationAEC-Q101
Rds On (Max)7.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.2 V

Pricing

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CAD

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Documents

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