CoolSIC™ MOSFET650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also forCoolMOS™andCoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems.