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PJL9409_R2_00001

PJL9409_R2_00001

NRND
Panjit International Inc.

MOSFETS 30V P-CHANNEL ENHANCEMENT MODE MOSFET

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PJL9409_R2_00001

PJL9409_R2_00001

NRND
Panjit International Inc.

MOSFETS 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

PJL9409_R2_00001

MOSFETS 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPJL9409_R2_00001
Current - Continuous Drain (Id) (Ta)6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)7.8 nC
Input Capacitance (Ciss) (Max)870 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC, 8-SOP
Package Width3.9 mm
Power Dissipation (Max)1.7 W
Rds On (Max)30 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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