HGTP10N40E1
ActiveON Semiconductor
10A, 400V, N-CHANNEL IGBT
HGTP10N40E1
ActiveON Semiconductor
10A, 400V, N-CHANNEL IGBT
Description
General part information
HGTP10N40E1
IGBT 400 V 10 A 60 W Through Hole TO-220-3
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTP10N40E1 |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Pulsed (Icm) | 17.5 A |
| Gate Charge | 19 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power - Max | 60 W |
| Vce(on) (Max) | 3.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
Pricing
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