Specification	STQ3NK50ZR-AP

Current - Continuous Drain (Id) (Tc)	500 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92-3
Power Dissipation (Max)	3 W
Rds On (Max)	3.3 Ohm, 3.3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4.5 V

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