RFP10P12
ActiveON Semiconductor
P-CHANNEL POWER MOSFET
RFP10P12
ActiveON Semiconductor
P-CHANNEL POWER MOSFET
Description
General part information
RFP10P12
P-Channel 120 V 10A (Tc) 75W (Tc) Through Hole TO-220
Technical Specifications
Parameters and characteristics for this part
| Specification | RFP10P12 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) | 500 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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